package schematic 1/9/04 page 1 of 9 ?2004 fairchild semiconductor corporation ac input/phototransistor optocouplers h11aa1-m h11aa2-m h11aa3-m h11aa4-m description the h11aax-m series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. features bi-polar emitter input built-in reverse polarity input protection underwriters laboratory (ul) recognized file #e90700, volume 2 vde approved file #102497 (ordering option ?? applications ac line monitor unknown polarity dc sensor telephone line interface 1 2 6 5 coll 4 emitter base 3
1/9/04 page 2 of 9 ? 2004 fairchild semiconductor corporation ac input/phototransistor optocouplers h11aa1-m h11aa2-m h11aa3-m h11aa4-m *typical values at t a = 25 c absolute maximum ratings (t a =25 c unless otherwise speci ed) parameter symbol device value units total device storage temperature t stg all -40 to +150 c operating temperature t opr all -40 to +100 c lead solder temperature t sol all 260 for 10 sec c total device power dissipation derate linearly from 25 c p d all 250 mw 2.94 mw/ c emitter continuous forward current i f all 60 ma forward current peak (1 s pulse, 300 pps) i f (pk) all 1.0 a led power dissipation derate linearly from 25 c p d all 120 mw 1.41 mw/ c detector continuous collector current i c all 50 ma detector power dissipation derate linearity from 25 c p d all 150 mw 1.76 mw/ c electrical characteristics (t a = 25 c unless otherwise speci ed.) individual component characteristics parameter test conditions symbol device min typ* max unit emitter input forward voltage i f = 10 ma v f all 1.17 1.5 v capacitance v f = 0 v, f = 1.0 mhz c j all 80 pf detector breakdown voltage collector to emitter i c = 1.0 ma, i f = 0 bv ceo all 30 100 v collector to base i c = 100 a, i f = 0 bv cbo all 70 120 v emitter to base i e = 100 a, i f = 0 bv ebo all 5 10 v emitter to collector i e = 100 a, i f = 0 bv eco all 7 10 v leakage current collector to emitter v ce = 10 v, i f = 0 i ceo h11aa1,3,4(-m) 1 50 na h11aa2-m 1 200 capacitance collector to emitter v ce = 0, f = 1 mhz c ce all 10 pf collector to base v cb = 0, f = 1 mhz c cb all 80 pf emitter to base v eb = 0, f = 1 mhz c eb all 15 pf
1/9/04 page 3 of 9 ? 2004 fairchild semiconductor corporation ac input/phototransistor optocouplers h11aa1-m h11aa2-m h11aa3-m h11aa4-m *typical values at t a = 25 c transfer characteristics (t a = 25 c unless otherwise speci ed.) characteristics test conditions symbol device min typ* max units current transfer ratio, collector to emitter i f = 10 ma, v ce = 10 v ctr ce h11aa4-m 100 % h11aa3-m 50 h11aa1-m 20 h11aa2-m 10 current transfer ratio, symmetry i f = 10 ma, v ce = 10 v (figure 11) all .33 3.0 saturation voltage collector to emitter i f = 10 ma, i ce = 0.5 ma v ce(sat) all .40 v isolation characteristics characteristic test conditions symbol min typ* max units package capacitance input/output v i-o = 0, f = 1 mhz c i-o 0.7 pf isolation voltage f = 60 hz, t = 1 sec. v iso 7500 vac(pk) isolation resistance v i-o = 500 vdc r iso 10 11 ?
1/9/04 page 4 of 9 ? 2004 fairchild semiconductor corporation ac input/phototransistor optocouplers h11aa1-m h11aa2-m h11aa3-m h11aa4-m fig. 2 normalized ctr vs. forward current i f - forward current (ma) n o r mali ze d c t r fig. 3 normalized ctr vs. ambient temperature n o r malize d c t r t a - ambient temperature ( c) fig. 5 ctr vs. rbe (saturated) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) fig. 4 ctr vs. rbe (unsaturated) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) fig. 6 collector-emitter saturation voltage vs collector current i c - collector current (ma) v ce (sat) - collector-emitter saturation voltage (v) fig. 1 input voltage vs. input current v f - input voltage (v) i f - input current (ma) 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 t a = 25 c i f = 2.5ma i f = 20ma i f = 10ma i f = 5ma -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2. 0 -100 -80 -60 -40 -20 0 20 40 60 80 100 t a = 25 c 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ce = 5v t a = 25 c i f = 10ma i f = 5ma i f = 20m a 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ce = 0.3v t a = 25 c i f = 10ma i f = 5ma i f = 20m a -60 -40 -20 0 20 40 60 80 100 0.2 0.4 0.6 0.8 1.0 1.2 1. 4 i f = 10ma v ce = 5v normalized to i f = 10ma, t a = 25 c i f = 5ma i f = 20ma 051015 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1. 4 t a = 25 c v ce = 5v normalized to i f = 10ma
1/9/04 page 5 of 9 ? 2004 fairchild semiconductor corporation ac input/phototransistor optocouplers h11aa1-m h11aa2-m h11aa3-m h11aa4-m n o r m a l iz e d t on - (t on(r be ) / t on(open) ) fig. 8 normalized t on vs. r be r be - base resistance (k ?) fig. 7 switching speed vs. load resistor r-load resistor (k ?) swit c hing spe e d - ( s) n o r m a l iz e d t off - (t off(r be ) / t off(open) ) fig. 9 normalized t off vs. r be r be - base resistance (k ?) fig. 10 dark current vs. ambient temperature t a - ambient temperature ( c) i ce o - co l l e c t o r -e m i t t e r d a r k cur r e n t (n a ) v ce - collector to emitter voltage (v) .01 .05 .1 .5 5 1 10 n o r m a l iz e d o utput cur r e n t .01 .005 .05 .1 .5 1 5 10 fig. 11 output symmetry characteristics i f = i - 10ma i i f = i 10ma i normalized to: v ce = 10 v i f = 10 ma the maximum peak output current will be no more than three times the minimum peak output current at i f = 10 ma 10 100 1000 10000 1 00000 0 1 2 3 4 5 6 7 v cc = 10v i c = 2ma r l = 100 ? t a = 25 c 10 100 1000 10000 100000 0.0 0.5 1.0 1.5 2.0 2.5 3. 0 v cc = 10v i c = 2ma r l = 100 ? t a = 25 c 0.1 1 10 100 0.1 1 10 100 1000 i f = 10ma v cc = 10v t a = 25 c t off t on t r t f 0 2040608010 0 0.1 1 10 100 1000 10000 v ce = 10v v ce = 30v
1/9/04 page 6 of 9 ? 2004 fairchild semiconductor corporation ac input/phototransistor optocouplers h11aa1-m h11aa2-m h11aa3-m h11aa4-m note all dimensions are in inches (millimeters) package dimensions (through hole) package dimensions (surface mount) package dimensions (0.4 lead spacing) recommended pad layout for surface mount leadform 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.320 (8.13) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15 0.012 (0.30) 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.035 (0.88) 0.006 (0.16) 0.012 (0.30) 0.008 (0.20) 0.200 (5.08) 0.115 (2.93) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) 0.070 ( 1.78 ) 0.060 ( 1.52 ) 0.030 ( 0.76 ) 0.100 ( 2.54 ) 0.305 ( 7.75 ) 0.425 ( 10.79 )
1/9/04 page 7 of 9 ? 2004 fairchild semiconductor corporation ac input/phototransistor optocouplers h11aa1-m h11aa2-m h11aa3-m h11aa4-m ordering information marking information option/order entry identi?r description s surface mount lead bend sr2 surface mount; tape and reel t 0.4" lead spacing v vde 0884 tv vde 0884, 0.4" lead spacing sv vde 0884, surface mount sr2v vde 0884, surface mount, tape & reel h11aa1 v x yy q 1 2 6 4 3 5 *note parts that do not have the v option (see de nition 3 above) that are marked with date code 325 or earlier are marked in portrait format. de?itions 1 fairchild logo 2 device number 3 vde mark (note: only appears on parts ordered with vde option see order entry table) 4 one digit year code, e.g., 3 5 two digit work week ranging from 01 to 53 6 assembly package code
1/9/04 page 8 of 9 ? 2004 fairchild semiconductor corporation ac input/phototransistor optocouplers h11aa1-m h11aa2-m h11aa3-m h11aa4-m note all dimensions are in inches (millimeters) re?w pro?e (white package, -m suf?) carrier tape specifications 4.0 0.1 1.5 min user direction of feed 2.0 0.05 1.75 0.10 11.5 1.0 24.0 0.3 12.0 0.1 0.30 0.05 21.0 0.1 4.5 0.20 0.1 max 10.1 0.20 9.1 0.20 1.5 0.1/-0 ramp up = 2 10 c/sec peak reflow temperature: 245 c (package surface temperature) time of temperature higher than 183 c for 120 180 seconds one time soldering reflow is recommended 230 c, 10 30 s time (minute) 0 300 250 200 150 100 50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 temperature ( c) time above 183 c, 120 180 sec 245 c peak
life support policy fairchild s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. 1/9/04 page 9 of 9 ? 2004 fairchild semiconductor corporation ac input/phototransistor optocouplers h11aa1-m h11aa2-m h11aa3-m h11aa4-m
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